Thermoelectric properties of InSe and AlSe bilayer thin films
The indium selenide (InSe) and aluminum selenide (AlSe) bilayer thin films of different thickness ratio have been prepared using thermal evaporation at vacuum. Thermoelectric behaviour of each sample has been determined temperature regions of 300-310 K. The thermoelectric behaviour of prepared thin films has been found to improve when samples have been annealed in vacuum at 70 ºC and 100 ºC. Electrical studies have been carried out of each film before and after annealing.
Indium selenide; Aluminum selenide; Bilayer thin films; Thermoelectric power
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