A comprehensive Analysis of Nanoscale Transistor Based Biosensor: A Review

Abstract

Imperative introduction of biosensor in the field of medicine, defence, food safety, security and environmental contamination detection acquired paramount attraction. Thus the foundation of the fame of biosensors in detecting wide scope of biomolecules in innumerable fields has driven researchers in advancement of biosensor and enhancing
more updates in devices. Among all semiconductor-FET based biosensors grab attraction due to their miniaturization,mass production, ultra-sensitive in nature, improved lifetime, rapid response and reduce thermal budgets. In this review, field effect based biosensors sensitive to ions their principle model along with pros and cons of different structures. Various performance characteristics for semiconductor based biosensor are explored along with detection of label free analytes such as tuberculosis, glucose, antigen 85-B with ISFET. Following with comprehensive detail on MOSFET junction less Silicon based Dual Gate Biosensor with their design parameters for biosensing of neutral and charged analytes with results summarized in table. Drawbacks of dual gate structure introduce cylindrical structures summarized in table with device parameters and respective sensitivity. Role of analytes size in choosing the cavity width and position of analytes influence the sensitivity is recorded. Recent advancement on selectivity, sensitivity and switching results the gate and channel engineering thus compound semiconductor came in picture. In last section challenges with solution and importance of III-V compound channel as scope in biosensor with taking the benefits of fabrication of III-V compound MOSFETs. Semiconductor compound properties are summarized in table for various applications in recent use.