Measurement of g-ray transmission factors of semiconductor crystals at various annealing temperature and time

AKCA, BURCU

Abstract

In the present study, the change according to the annealing temperature and time of g-ray transmission factors or transmissivity of InSe, InSe:Sn semiconductor crystals that prepared by not evaporated onto the stage (glass) and InSe, InSe:Mn, InSe:Fe, InSe:Ag, InSe:Cd, InSe:Sn and InSe:Gd semiconductor crystals that prepared by evaporated onto the stage (glass), have been examined. Gamma-rays of 241Am passed through crystals have been detected by a high-resolution Si(Li) detector and by using energy dispersive X-ray fluorescence spectrometer (EDXRF). Undoped-InSe and Mn, Fe, Ag, Cd, Sn, Gd doped InSe semiconductor crystals have been grown by using the Bridgman/Stockbarger. Evaporated onto the stage crystals have been prepared by using thin-film coatings system with thermal evaporation method. The structural and lattice parameters of the InSe and InSe:Sn semiconductors have been analyzed by using X-ray diffractometer (XRD). Transmission factors have been given graphically against the annealing temperature and time for time range 0 (unannealed)-60 min with a step of 10 min. Also, transmission factors have been measured for annealing temperature range 50-(combustion temperature of the crystal) with a step of 50°C for not evaporated onto the stage semiconductor crystals. Transmission factors have been measured for annealing temperature range 60°C-(cracking temperature of the stage) with a step of 60°C for evaporated onto the stage crystals. Results are presented and discussed in the present paper.

 


Keyword(s)

Transmission factors; EDXRF; Crystal growth; InSe; Semiconductor single crystals; Bridgman/Stockbarger technique; XRD


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