Radiation Effects in Ultraviolet Sensitive Pd/4H-SiC Schottky Detectors
4H-SiC, by virtue of its intrinsic properties, is a very promising semiconductor material for fabricating rad-hard UV detectors suitable for harsh radiation environments. This paper aims to investigate the radiation tolerance of indigenously developed Pd/4H-SiC Schottky detectors, in order to determine their feasibility for space applications. 4H-SiC detectors of active area 1 × 1 mm2 were irradiated with electrons of energy 10 MeV at fluence of 2×1013 e-/cm2 and gamma rays from a Co-60 source with a total dose of 1 Mrad. The impact of these irradiations on electro-optical characteristics of the devices was studied by analyzing the changes in electrical parameters like reverse saturation current (Is), ideality factor (n), barrier height (ɸB), effective doping concentration (Neff) derived from I-V and C-V characteristics as well as in the UV spectral responsivity (i.e., from 248 to 365 nm) of the irradiated detectors. The electron irradiated device showed negligible change in I-V and C-V characteristics whereas its UV spectral responsivity at the peak wavelength of 290 nm reduced by 48.7 %. Gamma irradiated device displayed a noticeable variation in its electrical characteristics and 15.8 % reduction in the spectral responsivity (optical characteristics) at the peak wavelength. The results show that the radiation hardness of 4H-SiC detectors is better than that of conventional semiconductor ones, making it a more appealing choice as radiation detectors in space systems.
4H-SiC UV detectors; Electron irradiation; Gamma irradiation; I-V characteristics; C-V characteristics; UV spectral responsivity
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