On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit

D, Bhavana ; J, Sirisha ; M. A, Sumesh ; G., Ravi Chandra Babu; Maji, Amit ; Karanth, S. P. ; K. V., Sriram

Abstract

The monitoring of solar ultraviolet radiation from a space platform is now considered essential for a wide range of fieldsincluding solar physics, atmospheric science and astrobiology. 4H-Silicon Carbide (4H-SiC) is a superior alternative toconventional materials like silicon for the fabrication of UV detectors for adverse space conditions due to its inherentradiation hardness and visible-blind nature. This paper describes the space qualification and deployment of indigenouslydeveloped Pd/4H-SiC Schottky UV detectors in a low-earth orbit (LEO) and their on-board performance. Two SiC UVdetectors were flown as a rad-hard sun detection sensor in the nanosatellite INS-2TD. The sensor has carried out solar UVflux observations continuously since its launch in February 2022 and the data gathered during the first seven months offlight is discussed in this paper.


Keyword(s)

4H-SiC UV detectors; LEO; Space qualification; Solar UV measurements

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