Characterization of zincblende CuInS2 nanostructured film: The XRD, Raman, FT-IR and UV-vis spectroscopical investigations

Hurma, Tülay


Zincblende semiconductor CuInS2 has not been focus of studies until recently. Ultrasonic spray pyrolysis (USP) method is used to deposit zincblende CuInS2 nanostructured film on glass substrate at 250 °C in this study. The film was characterized by vibrational (FT-IR and Raman) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectra. The crystallite size was calculated to be around 30 nm by using the well- known Scherrer equation with the peak corresponding to (111) plane. The Raman peak at 306 cm-1 is assigned to the A1 mode of the CuAu-ordered CuInS2. Thus, metastable cubic zincblende structure would be evidenced. The absorption coefficient of the film has been found to be in the order of 104-105 cm−1, which make it promising for an intensive optoelectronic application.


Zincblende CuInS2 film; XRD; Raman; FTIR; Optical Properties

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