Optical and electronic properties of iron xanthate thin film

Abstract

The iron xanthate thin films (IXTF) were deposited by the chemical bath deposition method on various substrates, such as amorphous glass, p and n-silicon, indium tin oxide and poly(methyl methacrylate). The structure of the films was analyzed by far-infrared spectrum (FIR), mid-infrared (MIR) spectrum and scanning electron microscope (SEM) and their structural, optical and electrical properties were examined. Electrical properties were measured using the four-point method whereas optical properties were investigated via the UV-VIS spectroscopic technique. The transmittance was found to be 70-80% at optimum deposition time and temperature (4 h, 50°C). The optical band gap of the IXTF was graphically estimated to be 3.62-3.83 eV. The resistivity of the films was calculated to be between 23.5-38.5 Ω∙cm on commercial glass depending on the film thickness and between 23.8-42.0 Ω∙cm on the other substrates. It was found that resistivity changed with film thickness. The MIR and FIR spectra of the films were in line with the literature analogues.