Chattopadhyay, P., University of Calcutta, India
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Vol 52, No 3 (2014): Indian Journal of Pure & Applied Physics - Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Role of Schottky-ohmic separation length on dc properties of Schottky diode
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Vol 52, No 11 (2014): Indian Journal of Pure & Applied Physics - Interdisciplinary Physics and Related Areas of Science and Technology
Saturated velocity model of MESFET in the presence of non-uniform distribution of channel impurities and interface states at the gate contact
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Indian Journal of Pure & Applied Physics (IJPAP)