Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage

Abstract

In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique.